Specifications
|
one
|
Pressure in the chamber, mm Hg
|
5×10 -6
|
2
|
Time to reach vacuum, min,
|
<20
|
3
|
Heating temperature in the chamber, °C
|
100…320
|
4
|
Number of resistive evaporators, pcs.
|
2
|
five
|
Number of electron-beam evaporators, pcs.
|
one
|
6
|
Number of substrate holders, pcs.
|
4
|
7
|
Maximum substrate size, mm
|
50×50
|
8
|
Plasma cleaning voltage, kV
|
7
|
nine
|
Current of resistive evaporators, A, at 24 V
|
150
|
10
|
Electron-beam evaporator current, mA
|
500
|
eleven
|
Power consumed by the installation, kW
|
twenty
|
12
|
Control system
|
industrial computer
|